资料介绍
基站RF功率放大器的偏置RF
A RF RF IC DMOS (LDMOS) MOSFET GaN FET HFET SiC AB A
RF DC RF AB
28V AB
360° RF AB RF A
LDMOS
LDMOS
RF
RF RF (Iout) ( RF ( ) ( 360°C MOSFET ( A ) A DC
LDMOS I vs. Vgs ACROSS TEMPERATURE
5.0 4.5 28V 4.0 3.5 Id (A) AMPLIFIER INPUT 3.0 2.5 2.0 1.5 IOUT VRF RLOAD Id (A) @ +125°C Id (A) @ +25°C Id (A) @ -40°C
LDMOS RF LDMOS 1) LDMOS K FET LDMOS )
RF
LDMOS K V th
Iout = K (Vgs - Vth) 2 Vth 2 AB A
VBIAS
+
1.0 0.5 0 3.0 3.5 4.0 Vgs (V) 4.5 5.0
1.
DC
LDMOS
18
2.
LDMOS
DS1847
3 LDMOS IC LDMOS LDMOS )
A
AB
H1
REF02 28V
DS1847 DS1847 256
LOOKUP TABLE
DS1847
DATA CLOCK TEMP H0
IOUT RLOAD
L1
2(
L0 VRF
2003 Development
11
Wireless Design &
3.
DS1847
LDMOS
19
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